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National AI Research InstituteMaking a Better Tomorrow


Introduction of Research

Materials and Components Research Division

  • Emerging Devices Research Group
    n Emerging Devices Research Group, we are studying ICT and new industrial devices and components such as “nano electron sources”, “silicon photonics chips“, ”metal-insulation transition (MIT)“, ”low-dimensional flexible electronic/photonic devices“ for leading the fourth industrial revolution.

    The nano electron source study is focused on an ultra high-density electron source and its applications including new-concept digital x-ray sources, smart medical imaging and non-destructive inspection components/systems; the silicon photonics chip study on inter- and intra-chip optical data communications through chip-level optical I/Os in silicon chips; the metal-insulation transition study on the phenomenon and mechanism of the MIT based on Mott-Hubbard theory including critical temperature sensor or switch devices; and the low-dimensional flexible electronic/photonic devices study on a variety low-dimensional nano materials and high-quality graphene synthesis including high- performance hetero-junction and photonic devices, sensors.

    Our Emerging Devices Research Group consists of 30-more research experts with deep scientific knowledge and many-year research experience, and pursues a world-leading cradle of new ICT and industrial devices/components based on special semiconductor and nano-technology facilities and cooperation with research institutes in USA, France, Korea, etc.

     Image <Emerging Devices Research Group>
  • ICT Materials Research Group
    1. New IT Materials research area
    We are developing two-dimensional semiconductor materials and devices. Van der Waals 2D semiconductor materials have great advantages such as high mobility, high transparency, high flexibility, and high responsibility owing to its atomically thin and strong in-plane bonding characteristics. The promising 2D semiconductor materials and unique process technologies will be developed for the purpose of transparent and flexible future device applications.

    2. Photovoltaics technology area
    We are developing the technology to improve the photovoltaic conversion efficiency, R&D on materials, various device processing such as evaporation, reactive sputtering, electroplating etc. and module fabrication is being investigated. In specifics, we are working on the high efficient Cu(In,Ga)Se2 photovoltaic device and its mechanism, flexible devices prepared on stainless steel foil and polyimide, eco-friendly buffer materials without toxicity, and the control of band alignment between junctions. Si/SiGe thin film solar cells research works including highly conductive and transparent TCO, highly efficient light capturing structure using PECVD, ICPCVD, and sputter deposition techniques, and feasibility studies on new light absorbing materials and new device structures are carried out. Using Si/SiGe thin film, transparent solar cells for windows and sunroofs are also under study. The main issue is a development of reliable cells with high efficiency and high transparency concurrently. We are also developing the technologies to improve the conversion efficiency and long term stability of flexible, colorful and transparent organic-inorganic hybrid solar cells for BIPV and green house.

    3. 3D New materials & devices research area
    Future ICT technology is expected to develop towards converging new materials with novel fabrication technologies. Towards this end, diverse research in novel materials & devices research area, such as energy conversion, storage, and meta electronics fabrication for ICT device application using nano or meta material/structure and 2D/3D printing technologies are being conducted. More specifically, high efficiency silicon thermoelectric device and high performance thermoelectric cooling device by suppressing phonon transport using low dimensional nanostructure and metal/semiconductor heterostructure, biometric sensor based on thermal wave, various sensor based on MEMS process, high efficiency graphene supercapacitor by incorporating functional patterns into 2 and 3 dimensional structures using 2D/3D printing technique, 3D printing-based advanced ICT devices, and metamaterial-based next generation high speed/low power/highly dense optical and memory devices are being studied. Based upon these devices, integrated module and system research for IoT service and wearable device platform are also being carried out.

    4. Packaging technology area
    We are developing material, design and process technologies for the 2.5D/3D IC integration based on the through silicon via (TSV) technology, which provide a platform for a hybrid integration composed of digital and RF devices, sensors, and so on. The thermal dissipating device with capability of high heat flux and large area and low-cost high thermal conducting materials have been developed. A variety of materials technologies have been developed, so that we have fluxing underfill, maskless bumping, and epoxy underfill technologies. We have established a spin-off company commercializing packaging materials on Jan. 2012. Recently, a low temperature, molten metal-based interconnection technology for flexible IoT platforms is being studied.

     Image <ICT Materials Research Group>