ㅇ 제목 : InAs Quantum Dot Lasers Epitaxially Grown on Silicon

ㅇ 장소 : ETRI 3동 307호 회의실

Silicon photonics has been intensively studied for future optical interconnects, telecom, datacom, and various sensor applications. While many high performance passive components, such as waveguides, resonators and detectors have been demonstrated, efficient and reliable light sources monolithically integrated on silicon remain challenging. III/V quantum dot (QD) lasers were initially studied for telecom applications due to their unique properties that can potentially enable very low threshold, temperature-insensitive, low reflection-sensitive and ultra-small foot-print lasers. Recently, we have witnessed that InAs/GaAs QD lasers can be grown on silicon by epitaxy while maintaining their superior performance. Advantages of QD over quantum well lasers on silicon are longer lifetime, lower reflection sensitivity and smaller linewidth enhancement factor. Here, we present recent achievements in performance and reliability of the QD lasers epitaxially grown on silicon. Fabry-Perot QD lasers show a CW threshold current of 4.8 mA, linewidth enhancement factor of 0.1, extrapolated laser lifetimes more than 10 million hours at 35 °C, and direct modulation up to 12 Gbps. We also show ultra-small microring QD lasers with a CW threshold of 0.5 mA and single-section mode-locked lasers with a 490 fs pulse width and 31 GHz repetition rate.