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Equipment Status

Compound Semiconductor Laboratory

HOME Equipment Status Compound Semiconductor Laboratory

MOCVD

Maker
  • Aixtron 200/4
Application
  • III-V Semiconductor Epitaxy for Optoelectronic Devices
    • Laser Diodes
    • Photodetectors
    • Solar Cells
    • High Speed Devices
    • Source : TMGa, TMIn, TMAl, AsH3, PH3 * Very toxic gases
    • Dopant : DEZn, Si2H4
    • Growth Temperature : 550 ~ 680℃
    • Growth Pressure : 100mbar
    • Growth Rate : 0.5~4um/hr
Substrate
  • InP wafer(2 inch, Piece * Piece : quarter of 2 inch)
  • GaAs wafer(2 inch, Piece * Piece : quarter of 2 inch)
MOCVD

ICP

Maker
  • Plasma-Therm
Application
  • InP etch : HBr 15sccm, RF 100w, ICP 500w, 3mTorr
  • GaAs etch : HBr 15sccm, N2 2sccm, RF 100w, ICP 600w, 3mTorr
  • AlGaAs etch : Cl2 9sccm, Ar 2sccm, H2 19sccm, RF 100w, ICP 500w, 3mTorr
Substrate
  • InP Wafer(3 inch, Piece)
  • GaAs Wafer(3 inch, Piece)
ICP

E-beam evaporator

Maker
  • Temescal
Application
  • Base Metal(Ti, Au), (Ti, Ni, Au)
  • Heater Metal(Cr, Au), (Ti, Pt)
  • T-Gate Metal(Ni, Au), FMT(Ti, Au), Backside metal(Ti, Au)
  • P metal(Ti, Pt, Au) ,N metal(Cr, Au)
Substrate
  • InP Wafer(2 inch~6 inch, Piece)
  • GaAs Wafer(2 inch~6 inch, Piece)
  • Si Wafer(2 inch~6 inch, Piece)
E-beam evaporator

Lithography

Stepper
  • Nikon(NSR2205i12D)
Application
  • PROCESS/GANRF2017-2, PROGRAM/OPAD, EXP. TIME/400
  • PROCESS/MZM17, PROGRAM/14, , EXP. TIME/800
  • PROCESS/GANRF17E-MMIC, PROGRAM/DVIA, , EXP. TIME/340
  • PROCESS/M-HEMT18-1, PROGRAM/RES, , EXP. TIME/40
Substrate
  • GaAs wafer(4 inch, 3 inch, 2 inch)
  • InP wafer(4 inch, 3 inch, 2 inch)
  • GaN wafer(4 inch, 3 inch, 2 inch)
Lithography