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Silicon Optical/Radiation Sensor Technology
Technology Overview
- Multi-cell silicon optical sensors with high photosensitivity and fast response time in the near-infrared wavelength range
- Human-eye and near-IR integrated silicon optical sensors
- Various silicon radiation sensors: Si PIN Detector, Linear Detector, Pixel Detector, μ-Strip Detector, etc.
- Collision prevention sensors, integrated sensors for light/temperature, medical/radiation inspection, X-ray detectors for logistics screening at airports, etc.
Silicon Power Semiconductor Technology
Technology Overview
- High-density Trench Gate DMOS (TDMOS) technology for 40-200V range
- Integrated Free-Wheeling Diode (FRD) in 600V Reverse Conducting IGBT (RC-IGBT) and Semi-Trench applied 1200V NPT IGBT technology
- Super Barrier Rectifier (SBR) with low voltage loss, fast reverse recovery time, high temperature stability, and high EAS characteristics
- Power integrated circuit technology incorporating 400V LDMOS, CMOS, BJT, and Diode
Pulse Power Semiconductor Technology
Technology Overview
- 1400V Silicon MOS Controlled Thyristor (MCT) technology for high-voltage switches
- On/Off control via MOS drive, low forward voltage drop, high pulse current (>1kA), and di/dt (>10kA/μs)
- Motor drivers, UPS (Uninterruptible Power Supply), Capacitor Discharge Ignition Systems, and military electronic safety devices (EL items)
- 5000V/2200A class Light Triggered Thyristor (LTT) technology for HVDC (High Voltage Direct Current) and electromagnetic propulsion systems
- - Large-area Light Triggered Thyristor technology with overvoltage self-protection features (BV>5000V, BVBOD≒5000V, ITSM>60kA)
- - High power component for national industry power systems such as HVDC and Core component for electromagnetic propulsion systems of future weaponry like railguns (EL items)
Silicon Carbide(SiC) Power Semiconductor
Technology Overview
- SiC Power Semiconductors : High voltage, high current density, high temperature stability, low current leakage, and fast switching characteristics
- Exclusive semiconductor batch fabrication infrastructure for SiC devices, enabling optimal environment for developing 6-inch SiC semiconductor devices
- Development of 1700V/70A grade SiC Schottky Barrier Diodes (SBD) with trench structure for improved breakdown voltage and leakage current characteristics
- Development of 1700V/70A grade SiC Metal-Oxide-Semiconductor Field-Effect Transistors (MOSFETs) utilizing self-aligned processes, exhibiting high temperature operation characteristics exceeding 150°C
0.8㎛ CMOS Design Guidelines
6-inch 0.8㎛ Silicon CMOS Semiconductor Process
- Twin Well
- 2-Poly (PIP Capacitor & Poly Resistor)
- 2-Metal, Operating Voltage=5V
- Design Rule, Spice Parameter, and Rule Check (DIVA) Provided
0.5㎛ CMOS Design Guidelines: Update pending
