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Equipment Status

Silicon Laboratory

HOME Equipment Status Silicon Laboratory

I-Line Stepper

Maker(model)
  • NiKon(NSR2205i11D, 12D)
Application
  • Resolution : 350nm
  • Alignment Accuracy : 70nm or better(LSA, FIA)
  • Exposure Area : 22mm square
  • Reduction Ratio : 1:5
  • Numerical Aperture : 0.63
  • Reticle : 6 inch
Substrate
  • Silicon Wafer, 6 inch
  • Quartz Wafer, 6 inch(@ i11D)
  • Glass Wafer, 6 inch(@ i11D)
I-Line Stepper

Track System

Maker(model)
  • TEL(Mark-Vz), TSTI(Smart-cube)
Application
  • Adhesion Treatment(HMDS) on Substrates
  • Photo Resist Coating
  • Development(TMAH) : Puddle&Spray
  • Hot Plate Baking
Substrate
  • Silicon Wafer, 6 inch
  • Quartz Wafer, 6 inch(@TSTI)
  • Glass Wafer, 6 inch(@TSTI)
Track System

Dry Etcher

Maker
  • AME(P-5000 MxP)
Application
  • Oxide Etch
  • Nitride Etch
  • Poly-Si Etch
  • Metal Etch
  • PR Strip
Substrate
  • Silicon Wafer(6 inch, Piece)
  • Quartz Wafer(6 inch, Piece)
  • Glass Wafer(6 inch, Piece)
Dry Etcher

Wet Station

Maker
  • ATIS
Application
  • Standard Cleaning : H2SO4/H2O2 + 100:1 HF Cleaning
  • SC1 Cleaning : NH4OH4/H2O2 + 100:1 HF Cleaning
  • HF Cleaning : 50:1 BHF, 100:1 HF Cleaning
  • DI Cleaning
  • H3PO4 Etch : Nitride Strip @160℃
  • Wet Etch : Oxide Etch, Metal Etch
  • PR Strip : Acid PR Strip
Substrate
  • Silicon Wafer(6 inch, Piece)
  • Quartz Wafer(6 inch, Piece)
  • Glass Wafer(6 inch, Piece)
Wet Station

LPCVD

Maker
  • centrotherm(E1550HT), 5Tube
Application
  • TEOS Oxide : 710℃, 250mTorr, TEOS 40sccm
  • Nitride, Low Stress Nitride
    • 770℃, 250mTorr, NH3 300sccm, DCS 50sccm
    • 825℃, NH3/DCS 30/150sccm ~ 50MPa Stress
  • Poly Si/Amorphous Poly Si
    • 625℃, 200mTorr, SiH4 72/68sccm
    • 530℃, 200mTorr, SiH4 72/68sccm
  • LTO : 425℃, 160mTorr, SiH4 160sccm, O2 160sccm
  • HTO : 850℃, 350mTorr, DCS 40sccm, N2O 160sccm
  • SiON : 850℃, 200mTorr, NH3 20sccm, DCS 20sccm, N2O 80sccm
Substrate
  • Silicon Wafer(6 inch, Piece Thickness : 1mm or less)
  • Quartz Wafer(6 inch, Piece Thickness : 1mm or less)
  • Glass Wafer(6 inch, Piece Thickness : 1mm or less)
LPCVD

PECVD

Maker
  • AME(P-5000 Mark Ⅱ)
Application
  • Oxide : 400℃, 3Torr, SiH4 60sccm, N2O 1200sccm
  • Nitride : 400℃, 4.5Torr, SiH4/NH3/N2 185/75/1800sccm
  • TEOS : 400℃, 5Torr, O2/He/TEOS 950/560/950sccm
  • SACVD BPSG : 480℃, 200mTorr, O3 4000sccm, TEOS/TEB/TEPO 500/187/68mgm
  • Oxynitride : 400℃, 4Torr, SiH4/N2O/N2 160/80/1000sccm
  • Ge Oxide : 400℃, 3Torr, SiH4 80sccm, N2O 1200sccm, GeH4
Substrate
  • Silicon Wafer(6 inch, Piece)
  • Quartz Wafer(6 inch, Piece)
  • Glass Wafer(6 inch, Piece)
PECVD

Sputter

Maker
  • Varian(3180, M2i, 3280)
Application
  • Al-1%Si : 200℃, 4.2KW
  • TiW : 100℃, 3KW
  • NiV, Cr, Mo : 100℃, 1.2KW, Variable Condition
  • Ti, TiN : 400℃, 2.4KW(Ti), 7.2KW(TiN)
  • AlN : 200℃, 1.9KW, N2/Ar 65/13sccm
  • NbN : Room Temp. 2.4KW, N2/Ar 20/20sccm
  • Pure Al, Al-1%Si : 200℃, 9.6KW
Substrate
  • Silicon Wafer(6 inch, Piece)
  • Quartz Wafer(6 inch, Piece)
  • Glass Wafer(6 inch, Piece)
Sputter

Furnace

Maker
  • centrotherm(E1550HT)
Application
  • Alloy : 400 ~ 460℃
  • Wet/Dry Oxidation, Anneal, Drive-in
    • 800 ~ 1250℃
    • P-type Wafer Process
  • Wet/Dry Oxidation, Anneal, Drive-in
    • 800 ~ 1250℃
    • N-type Wafer Process
  • Dry Oxidation, Anneal : 800 ~ 1250℃
  • POCl3 Doping : 800 ~ 900℃
Substrate
  • Silicon Wafer(5 inch, 6 inch, Piece Thickness : 1mm or less)
  • Quartz Wafer(5 inch, 6 inch, Piece Thickness : 1mm or less)
  • Glass Wafer(5 inch, 6 inch, Piece Thickness : 1mm or less)
Furnace

RTA

Maker
  • Kornic System(Korona 600S)
Application
  • RTA : Ar or N2 Ambient, 600 ~ 1100℃
Substrate
  • Silicon Wafer(6 inch, Piece)
RTA

Ion Implant

Maker
  • EATON(NV-6200)
Application
  • Medium Current Ion Imp.
    • BF2, B11, Ph Ion
    • Max 180KeV
    • Ion Dose : ~ 1E14
Substrate
  • Silicon Wafer(6 inch, Piece)
Ion Implant

Ion Implant

Maker
  • Varian(E-1000)
Application
  • High Current Ion Imp.
    • BF2, B11, Ph, As Ion
    • Max 180KeV
    • Ion Dose : ~ 1E16
    • Max 18ea Wafer Loading
Substrate
  • Silicon Wafer(6 inch)
Ion Implant