ㅇ 제목 : CMOS integrated circuits and system for affordable terahertz electronics

ㅇ 장소 : ETRI 3연구동 207호 부회의실

Sub-terahertz and terahertz waves, electromagnetic waves within the frequency range from 100GHz to 10THz, enable unprecedented capabilities thanks to their unique characteristics, such as short wavelength, wide bandwidth and spectral specificity. Key applications include high-resolution imaging, high-speed data communication and gas analysis with absolute specificity through rotational spectroscopy. However, the high cost of the terahertz instrumentation has been limiting its proliferation. If developed, compact and low-cost terahertz electronic systems will accelerate the adoption of terahertz technologies in everyday life. As mainstream silicon integrated circuits technologies offer high yield, large-scale integration and mass production capability, Si-based terahertz electronics can be one of the key enabler of such systems.

In this seminar, Si CMOS integrated circuits for terahertz applications will be introduced. Following a brief discussion on the tradeoffs and design approaches for CMOS terahertz circuit design, details of example circuits will be presented. The example circuits include 1) a 410-GHz short-range imaging receiver based on 4^th-order sub-harmonic mixer, demonstrating orders of magnitude improved sensitivity than incoherent detectors’ 2) highly-integrated coherent transceiver at 260GHz for long-range imaging.3) 300-GHz QPSK transmitter for 30-Gbps dielectric waveguide communication.